SI Diamond Technology, Inc. Announces The Successful Operation Of A Nanotriode-Type Transistor Utilizing Carbon Nanotubes

Austin, Texas – May 3, 2001 – SI Diamond Technology, Inc. (OTC BB: SIDT) through its subsidiary, Field Emission Picture Element Technology, Inc. (FEPET) today announced that it has operated a new nanotriode-type transistor from carbon nanotubes. Carbon nanotubes, which resemble nanowires, are 500 times smaller than today's silicon transistors. While others are demonstrating transistors operating in a solid-state format using the semiconductor properties of carbon nanotubes, FEPET's nanotriode-type transistor exploits the cold electron emission from these films in a vacuum microelectronic structure. It is FEPET's belief that the nanotriode type transistor that is a vertical device will offer much denser packaging than lateral structured transistors.

The structure of the nanotriode-type transistor is based on narrow vertical trenches in silicon having a special cathode metal at the bottom and ending with high quality gate dielectric coated with a metal. The carbon nanotubes are grown by selective methods in these trenches. Datacurves of the nanotriode-type transistor are presented on the website under the "Nanotriode Type Transistor" section showing operations at gate voltages as low as 10 volts achieving currents as high as 5 microamperes.

"Our research and development efforts show that carbon nanotubes are a valid approach to microelectronic miniaturization beyond silicon technology," said Dr. Zvi Yaniv, President and COO.

"We hope that the achievements of FEPET and others will spur the study of carbon nanotubes in the field of micro and nanoscale electronics," said Marc Eller, Chairman and CEO.

Safe Harbor Statement

This press release contains forward-looking information within the meaning of Section 27A of the Securities Act of 1933, and Section 21E of the Securities Act of 1934, and is subject to the safe harbor created by those sections. The Company's actual results could differ materially from those projected in the forward-looking information. Future results may be impacted by risk factors listed from time to time in SIDT's SEC reports. SI Diamond Technology, Inc. disclaims any intent or obligation to update forward-looking information.

SI Diamond Technology is a holding company consisting of three operating subsidiaries. The wholly owned Field Emission Picture Element Technology, Inc. (FEPET) subsidiary is developing products for applications utilizing SIDT's proprietary field emission technology. The wholly owned Electronic Billboard Technology, Inc. (EBT) subsidiary is geared toward the commercialization of electronic digitized sign technology. Sign Builders of America, Inc. (SBOA), a wholly owned subsidiary of EBT is a manufacturer of high quality signage. SI Diamond Technology's website is and

Company Contact:
Doug Baker
Applied Nanotech Holdings, Inc.

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